Hybrid Monte Carlo-Diffusion Studies of Modeling Self-Heating in Ballistic-Diffusive Regime for Gallium Nitride HEMTs

Abstract Exact assessment of self-heating is great importance to the thermal management electronic devices, especially when completely considering cross-scale heat conduction process. The existing simulation methods are either based on convectional Fourier's law or limited small system sizes, making it difficult deal with noncontinuum transport efficiently. In this paper, a hybrid phonon Monte Carlo diffusion method adopted predict device temperature in ballistic–diffusive regime. Heat around generation region and boundaries simulated by (MC) method, while other domain law. higher than that owing ballistic transport, calculation efficiency remarkably improved compared MC simulation. Furthermore, results indicate way modeling has remarkable impact transport. junction source (HS) scheme can be larger flux (HF) scheme, which opposite result under HS enhanced phonon-boundary scattering counteracts broadening source, leading stronger effect temperatures. conclusion verified one-dimensional analytical model. This work opened up an opportunity for fast extensive simulations transfer devices highlighted influence heating schemes.